论文标题
振动状态及其对4H碳化硅硅离剂量矩阵的温度和应变依赖性的影响
Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
论文作者
论文摘要
由于其出色的光学和自旋特性，碳化硅（SIC）中的硅成量矩形是量子技术应用中的新兴工具。在本文中，我们通过关注4H SIC中的两个硅胶合量V1和V2来探讨温度和应变对这些性质的影响。我们应用密度功能理论以外的近距离痴呆症近似来描述由声子辅助的电子激发态的温度依赖性混合。对于V1和V2中心，我们分别获得了5和22〜MEV的极性间隙，这会导致依赖温度依赖性的脱位和激发态的零场分裂，这解释了最近的实验发现。我们还计算了晶体变形如何影响这些发射器的零子线。我们的预测是这些量子箱对这些效果敏感的任何量子应用中的重要成分。
Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the temperature dependent mixing of electronic excited states assisted by phonons. We obtain polaronic gap around 5 and 22~meV for V1 and V2 centers, respectively, that results in significant difference in the temperature dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon-line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.
