论文标题
300-1600 nm波长的纳米结构锗具有> 99％的吸收
Nanostructured germanium with >99 % absorption at 300-1600 nm wavelengths
论文作者
论文摘要
近红外（NIR）传感器在各个行业领域（包括光学通信和医疗诊断）中找到了许多应用。但是，由锗（GE）制成的最先进的NIR传感器的反应较差，这在很大程度上是由于照明设备表面的高反射。我们在这里演示了一种通过对晶圆表面实现纳米结构来提高GE传感器灵敏度的方法。在整个UV-VIS-NIR光谱中，纳米结构的GE晶片的吸光度> 99％，高达1600 nm波长，这对于仅达到最大63％的裸GE晶片而言是显着改善。该过程被证明能够产生涵盖完整100毫米直径底物的均匀纳米结构以及具有不同尺寸和形状的蚀刻面罩开口的晶圆，这证明了其适用于CMOS传感器制造。结果表明，纳米结构的GE具有彻底改变基于GE的传感器的灵敏度的潜力。
Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor response, largely due to high reflection from the illuminated device surface. We demonstrate here a method to increase the sensitivity of Ge sensors by implementing nanostructures to the wafer surfaces. The absorbance of nanostructured Ge wafers is measured to be >99 % in the whole UV-VIS-NIR spectrum up to 1600 nm wavelength, which is a significant improvement to bare Ge wafers that reach absorption of only 63 % in maximum. The process is shown to be capable of producing uniform nanostructures covering full 100-mm-diameter substrates as well as wafers with etch mask openings of different sizes and shapes, which demonstrates its applicability to CMOS sensor manufacturing. The results imply that nanostructured Ge has potential to revolutionize the sensitivity of Ge-based sensors.
