论文标题
高温铁磁半导体：Janus单层Trihalides
High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides
论文作者
论文摘要
二维（2D）内在的铁磁半导体有望在自旋磁场中脱颖而出。最近，单层VI $ _ {3} $已实验合成，但是弱铁磁和较低的居里温度（$ t_c $）限制了其潜在应用。在这里，我们报告说，Janus结构可以将$ T_C $提升到240 K.，并讨论了Janus结构中高$ T_C $的原因来自$ T_ {2G} $和$ e_ {G} $ of nate-eigh-Neighbor V atoms的$ t_ {2g} $之间的下虚拟交换差距。此外，由于迅速淬火的直接交换相互作用驱动的铁磁性增加，可以通过拉伸应变进一步增强$ T_C $。我们的工作支持一种可行的方法，以增强单层VI $ _ {3} $的居里温度，并揭示了用于实际应用的新型稳定的稳定的内在FM半导体，以实现旋转型物质。
Two-dimensional (2D) intrinsic ferromagnetic semiconductors are expected to stand out in the spintronic field. Recently, the monolayer VI$_{3}$ has been experimentally synthesized but the weak ferromagnetism and low Curie temperature ($T_C$) limit its potential application. Here we report that the Janus structure can elevate the $T_C$ to 240 K. And it is discussed that the reason for high $T_C$ in Janus structure originates from the lower virtual exchange gap between $t_{2g}$ and $e_{g}$ states of nearest-neighbor V atoms. Besides, $T_C$ can be further substantially enhanced by tensile strain due to the increasing ferromagnetism driven by rapidly quenched direct exchange interaction. Our work supports a feasible approach to enhance Curie temperature of monolayer VI$_{3}$ and unveils novel stable intrinsic FM semiconductors for realistic applications in spintronics.
