论文标题

激光刺激了通过化学合成途径生长的F:SNO2纳米结构中的第二和第三谐波光学效应

Laser stimulated second and third harmonic optical effects in F: SnO2 nanostructures grown via chemical synthetic route

论文作者

Anusha, Acharya, B. Sudarshan, Antony, Albin, Ani, Aninamol, Kityk, I. V., Jedryka, J., Rakus, P., Wojciechowski, A., Poornesh, P., Kulkarni, Suresh D.

论文摘要

激光刺激了氟掺杂锡氧化锡(F:SNO2)纳米结构的第二和第三次谐波产生效应,而氟含量则提出。 F:SNO2纳米结构已通过喷雾热解技术以各种氟掺杂浓度制造。这些膜表现出多晶的性质,沿(1 1 0)衍射平面具有优先生长取向,这是X射线衍射研究所示的。 F:SNO2膜的光学传播从68%增加到80%。光致发光的研究表明,对于所有F:SNO2膜,观察到在约675 nm处的强紫色发射峰对应于400 nm,相对较弱的红色发射峰。在氟融合后,\ b {eta} eff值的增加支持了沉积膜在被动光学限制应用中的适用性。由于F掺杂而导致的空间电荷密度渗透性播放了这种类型的纳米结构的第二次谐波生成信号(SHG)的主要起源。在F:SNO2纳米结构上观察到的增强的第二和第三次谐波生成信号认可这些材料在各种非线性光学触发设备应用中的可信度。

Laser stimulated second and third harmonic generation effects in Fluorine doped tin oxide (F:SnO2) nanostructures versus the fluorine content is presented. The F:SnO2 nanostructures have been fabricated at various fluorine doping concentrations by spray pyrolysis technique. The films exhibit polycrystalline nature with a preferential growth orientation along (1 1 0) diffraction plane as evident from x-ray diffraction studies. The optical transmittance of the F:SnO2 films has increased from 68 percent to 80 percent. Photoluminescence studies revealed that strong violet emission peak corresponds to 400 nm and relatively weak red emission peak at about 675 nm was observed for all the F:SnO2 films. Increase in the\b{eta}eff value upon fluorine incorporation supports the applicability of the deposited films in passive optical limiting applications. The principal origin of second harmonic generation signals (SHG) for this type of nanostructures is played by the space charge density acentricity due to the F doping. The enhanced second and third harmonic generation signals observed on F:SnO2 nanostructures endorses the credibility of these materials in various nonlinear optical trigger device applications.

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