论文标题
通过Sol-Gel方法获得的VO2膜中的金属/氧化物/硅氧化物/硅结构中的记忆电气开关的影响
Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method
论文作者
论文摘要
研究了通过乙酰乙酸酯溶胶 - 凝胶方法获得的p型和N型硅的金属VO2-SI结构的电气开关和整流性能。开关效应显示是二氧化钒中半导体到金属相变（SMPT）的造成的。观察到了p-Si-VO2型异型异孔的向前偏置，开关阈值电压的移位伴随着记忆效应。为了解释这种效果，提出了一个模型，该模型表明存在与vo2/si接口处的通道相关的附加串联电阻，其中siox层在VO2沉积过程中形成。这种电阻既负责阈值开关特性，又是记忆效应，并且显示出氧离子电迁移过程是构成这种效果的基础。讨论了在氧化电子电子中结合了观察到的现象的潜在应用，结合了RERAM和SMPT的影响。
Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be due to the semiconductor-to-metal phase transition (SMPT) in vanadium dioxide. The shift of the switching threshold voltage, accompanied by the memory effect, in forward bias of the p-Si-VO2 anisotype heterojunction is observed. To explain this effect, a model is proposed which suggests the existence of an additional series resistance associated with a channel at the VO2/Si interface, where a SiOx layer forms during the VO2 deposition process. This resistance is responsible for both threshold switching characteristics, and the memory effect, and the oxygen ion electromigration process is shown to underlie this effect. Potential applications of the observed phenomena, combining the effects of ReRAM and SMPT, in oxide electronics are discussed.
