论文标题
SIC检测器的电和光谱特性
Electrical and Spectroscopic Properties of SiC Detectors
论文作者
论文摘要
在本文中，我们比较了三种不同的半绝量碳化硅（SIC）材料的适用性，用于制造辐射探测器。我们通过α光谱和I-V特性测量来制备具有各种金属接触组合的平面传感器，并通过各种金属接触组合进行了表征。我们观察到，II-VI公司的4H-SIC材料由于高浓度的钒掺杂而不适合放射探测器制造。由于残留杂质的高浓度，我们还提出了4H-SIC NORSTEL材料的电荷收集效率不足，并且我们评估了从Alpha光谱术中评估的低迁移率 - 千篇一律乘积（Alpha）= 3.5E-7 CM2/V。我们证明，Cree Company的4H-SIC材料是生产辐射探测器的最佳候选者。我们使用Auti/sic/tiau接触结构评估了千篇一律的产品（Alpha）= 5.4e-6 cm2/v。
In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized detector quality by the alpha spectroscopy and I-V characteristic measurements. We observed that 4H-SiC material from the II-VI company is not suitable for radiation detector fabrication due to high concentration of vanadium doping. We also present a poor charge collection efficiency of the 4H-SiC Norstel material due to high concentration of residual impurities and we evaluated low mobility-lifetime product (alpha)= 3.5E-7 cm2/V from the alpha spectroscopy. We demonstrate that the 4H-SiC material from the Cree company is the best candidate for the production of radiation detectors. We evaluated mobility-lifetime product (alpha)= 5.4E-6 cm2/V using AuTi/SiC/TiAu contact structure.
