论文标题
基于门控电势对称性的外侧GAAS量子点中的自旋量子
Control of a spin qubit in a lateral GaAs quantum dot based on symmetry of gating potential
论文作者
论文摘要
我们研究量子点对称性对单个电子GAAS自旋量子量子中鼠标频率和声子诱导的自旋松弛率的影响。我们发现，各向异性依赖磁场方向与门控电位的选择无关。另外，我们发现，相对于晶体学框架的量子点的相对方向与$ {\ bf c} _ {1 {\ rm v}} $，$ {\ bf c} _ {\ bf c} _ {\ bf c} _ {对称。为了证明门控电势形状对自旋量子乘积寿命的重要影响，我们比较了等边三角形，正方形和矩形限制的影响与谐波电位的已知结果。在研究的情况下，揭示了增强的自旋量子寿命，对于等边三角门控而达到了近六个数量级。
We study the influence of quantum dot symmetry on the Rabi frequency and phonon induced spin relaxation rate in a single electron GaAs spin qubit. We find that anisotropic dependence on the magnetic field direction is independent of the choice of the gating potential. Also, we discover that relative orientation of the quantum dot, with respect to the crystallographic frame, is relevant in systems with ${\bf C}_{1{\rm v}}$, ${\bf C}_{2{\rm v}}$, or ${\bf C}_{n}$ ($n\neq4r$) symmetry. To demonstrate the important impact of the gating potential shape on the spin qubit lifetime, we compare the effects of an equilateral triangle, square, and rectangular confinement with the known results for the harmonic potential. In the studied cases, enhanced spin qubit lifetime is revealed, reaching almost six orders of magnitude increase for the equilateral triangle gating.
