论文标题
$ \ mathrm {Mote} _ {2} $的激光诱导的金属阶段及其通过扫描门显微镜的联系属性
Investigation of laser-induced-metal phase of $\mathrm{MoTe}_{2}$ and its contact property via scanning gate microscopy
论文作者
论文摘要
尽管已经报告了高密度激光照射的MOTE $ _ {2} $的半导体，高密度激光辐照已报告超过0.3 mW/cm $^{2} $，但我们揭示了激光诱导的金属（LIM）相并不是由1T的结构由一个组成型相结合而成的1T结构，而不是由聚集的相结合，而不是构造的构造 - MOTE $ _ {2} $。该技术用于制造具有PD/2H-MOTE $ _ {2} $/LIM结构的现场效应晶体管，具有非对称金属接触，其接触属性通过扫描门显微镜研究。我们确认，始终以PD/2H-MOTE $ _ {2} $边界形成Schottky屏障（扩散电位），并在2H-MOTE $ _ {2} $ _ {2} $/LIM相交界处实现ohmic触点，用于N-和P-type载体。
Although semiconductor to metal phase transformation of MoTe$_{2}$ by high-density laser irradiation of more than 0.3 MW/cm$^{2}$ has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T' structure derived by a polymorphic-structural phase transition but consists instead of semi-metallic Te induced by photo-thermal decomposition of MoTe$_{2}$. The technique is used to fabricate a field effect transistor with a Pd/2H-MoTe$_{2}$/LIM structure having an asymmetric metallic contact, and its contact properties are studied via scanning gate microscopy. We confirm that a Schottky barrier (a diffusion potential) is always formed at the Pd/2H-MoTe$_{2}$ boundary and obstacles a carrier transport while an Ohmic contact is realized at the 2H-MoTe$_{2}$/LIM phase junction for both n- and p-type carriers.
