论文标题
在二维的Rashba电子系统中运输,并用相互作用的磁杂质掺杂
Transport in two dimensional Rashba electron systems doped with interacting magnetic impurities
论文作者
论文摘要
我们研究了具有强大的Rashba自旋轨道耦合(SOC)的二维电子系统的传输性能,并与相互作用的磁杂质掺杂。磁杂质之间的相互作用导致形成磁簇,其温度依赖平均大小(CMS)随机分布在系统表面上。通过采用广义的松弛时间近似,将磁簇视为散射中心,我们在两种策略(BCP)的方案(BCP)中获得了Rashba电子的非平衡分布函数,并以有效的松弛时间呈现电导率的明确形式。我们证明,SOC和磁性簇的综合作用使系统是各向异性的,并且磁性抗性在很大程度上取决于簇的平均大小和自旋,SOC的强度以及费米能量相对于BCP的位置。我们的结果表明,在BCP上方和下方的两个方案中,系统的运输属性之间存在许多对比。通过比较两个维度RASHBA系统的各向异性磁耐药性(AMR)与三维磁性拓扑绝缘子的表面AMR,我们还指出了这些系统之间的差异。
We study the transport properties of two dimensional electron systems with strong Rashba spin-orbit coupling (SOC) doped with interacting magnetic impurities. Interactions between magnetic impurities cause the formation of magnetic clusters with temperature dependent mean sizes (CMSs) distributed randomly on the surface of the system. Treating magnetic clusters as scattering centers, by employing a generalized relaxation time approximation we obtain the non-equilibrium distribution functions of Rashba electrons in both regimes of above and below the band-crossing point (BCP) and present the explicit forms of the conductivity in terms of effective relaxation times. We demonstrate that the combined effects of SOC and magnetic clusters cause the system to be anisotropic and the magneto-resistance strongly depends on both the clusters' mean size and spin, the strengths of SOC and the location of Fermi energy with respect to the BCP. Our results show that there are many contrasts between the transport properties of the system in the two regimes of above and below the BCP. By comparing the anisotropic magneto-resistance (AMR) of the two dimensional Rashba systems with the surface AMR of three dimensional magnetic topological insulators, we also point out the differences between these systems.