论文标题
高度均匀的GE/Si Hut电线的自我控制的增长
Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
论文作者
论文摘要
半导体纳米线在纳米级设备的开发中发挥了至关重要的作用，以实现旋转量子器，Majorana费米子，单个光子发射器，纳米处理器等。纳米线的单片增长是针对下一代设备的纳米层的整体增长，这是可寻求可寻求可寻址性和量表性的先决条件。在这里，我们结合了自上而下的纳米化机制和自下而上的自组装，我们报告了GE电线在预制的SI（001）基板上具有可控位置，距离，长度和结构的生长。这是通过使用SIGE应变 - 释放模板的新型生长过程来实现的，可以推广到其他材料组合。传输测量结果显示出可调的自旋轨耦合，其自旋轨道长度与III-V材料相似。同样，观察到紧密间隔线之间的电容耦合，这强调了它们作为实施两个量子门的宿主的潜力。报告的结果为具有SI兼容性的可伸缩量子设备打开了一条路径。
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.
