论文标题
氢末端钻石现场晶体管中的电荷载体迁移率
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
论文作者
论文摘要
钻石场效应晶体管（FET）在电力电子和高输出高频扩增中具有潜在的应用。在这样的应用中，对于减少损失和高速操作是可取的，高电荷载流子的迁移率是可取的。我们最近使用六角形氮化甲元介电制造了钻石FET，并观察到高于300 cm $^{2} $ v $^{ - 1} $ s $ s $^{ - 1} $的高移动性。在这项研究中，我们检查了哪种散射机制通过理论计算限制了FET的迁移率。我们的计算表明，主要的载流子散射是由$ \ $ \ $ 1 $ \ times10^{12} $ cm $ $^{ - 2} $的密度约为$ \ $ \ $ \ $ \的杂质引起的，并暗示可能在1000 cm $ $^{2} $ v $ v $ v $^{ - 1} $ s $ s $ s $ s $ s $ s $ s $^{ - 1} $上增加行动能力。
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In this study, we examine which scattering mechanism limits the mobility of our FETs through theoretical calculations. Our calculations reveal that the dominant carrier scattering is caused by surface charged impurities with the density of $\approx$1$\times10^{12}$ cm$^{-2}$, and suggest a possible increase in mobility over 1000 cm$^{2}$V$^{-1}$s$^{-1}$ by reducing the impurities.
