论文标题
在散装gan平面波导中的激子 - 果龙的强耦合：量化耦合强度
Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength
论文作者
论文摘要
我们研究了gan平板波导中激素和引导光子之间强耦合的示范和定量。通过光栅从T = 6〜K到300 k的波导极性子的分散体。根据不同的假设，在四个模型中仔细分析了它们，以评估强耦合方案。我们证明，引导的光子和激子在所有调查的温度下都强烈耦合，较小的$（11 \％）$依赖于温度。但是，在这四个模型之间，狂犬病分裂的值有很大不同：“耦合振荡器”模型过高估计耦合；分析性的“ Elliott-Tanguy”模型精确地描述了GAN在激子过渡附近的介电敏感性，导致Rabi分裂等于$ 82 \ pm 10 \ pm 10 \ mev $ te0模式；基于实验椭圆的模型导致$ 55 \ pm 6 \ mev。$我们证明，对于包括具有较大振荡力强度的活跃层的波导，这对于室温偏振器设备所需的要求，模式分散剂的强大弯曲不一定是对可靠的分析的稳定性，这不一定是对可靠的分析的迹象。
We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility.
