论文标题
使用菌株在六角硼中的指纹量子发射器
Fingerprinting quantum emitters in hexagonal boron nitride using strain
论文作者
论文摘要
二维范德华晶体及其异质结构为单个光子发射器的宿主提供了令人振奋的替代品。在不同的分层材料中，在二层宽带半导体的六角硼硼化氢醇中观察到了明亮和健壮的基于缺陷的单光子发射器。尽管研究迄今为止的研究工作，但导致六角硼硼化物中量子排放的深处缺陷的身份仍然未知。在这项理论工作中，我证明了应变诱导的发射频率变化取决于：（i）涉及光学激发的缺陷状态的详细性质，以及（ii）丰富的硼化学，从而导致硼原子之间的复杂相互作用。由于每个缺陷都显示出对菌株的明显响应，因此不仅可以用于调整发射频率，而且还可以鉴定硝酸乙二醇硼中的量子发射器。
Two dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide bandgap semiconductors as hosts of single photon emitters. Amongst different layered materials, bright and robust defect-based single photon emitters have been observed within hexagonal boron nitride, a layered wide-bandgap semiconductor. Despite research efforts to date, the identities of the deep defects responsible for quantum emissions in hexagonal boron nitride remain unknown. In this theoretical work, I demonstrate that the strain-induced changes in emission frequencies depend on: (i) the detailed nature of the defect states involved in the optical excitations, and (ii) the rich boron chemistry that results in complex interactions between boron atoms. As each defect shows a distinct response to the strain, it can be used not only to tune emission frequencies, but also to identify the quantum emitters in hexagonal boron nitride.
