论文标题
在无定形有机半导体中电荷载体的增强的双分子重组：克服兰格文的极限
Enhanced Bimolecular Recombination of Charge Carriers in Amorphous Organic Semiconductors: Overcoming the Langevin Limit
论文作者
论文摘要
我们考虑具有特殊的能量疾病的无定形有机半导体中的双分子电荷载体重组，在给定的传输部位，电子和孔的能级朝着相同的方向移动，而某些疾病的控制参数（平行障碍）的变化。这种特殊的疾病可以在构象障碍提供的能量障碍主要部分的材料中找到。与最近研究的静电障碍病例相反，构象障碍如果在空间上相关，则会导致重组速率常数的增加，这变得大于相应的langevin速率常数。具有主导构象障碍的有机半导体可能代表了第一类无定形有机半导体，其中重组速率常数可以克服langevin极限。
We consider the bimolecular charge carrier recombination in amorphous organic semiconductors having a special kind of energetic disorder where energy levels for electrons and holes at a given transport site move in the same direction with the variation of some disorder governing parameter (the parallel disorder). This particular kind of disorder could be found in materials where the dominant part of the energetic disorder is provided by the conformational disorder. Contrary to the recently studied case of electrostatic disorder, the conformational disorder, if spatially correlated, leads to the increase of the recombination rate constant which becomes greater than the corresponding Langevin rate constant. Probably, organic semiconductors with the dominating conformational disorder represent the first class of amorphous organic semiconductors where the recombination rate constant could overcome the Langevin limit.
