论文标题
使用薄石墨触点对多层2D半导体通道的带隙估计
Band Gap Estimation of Multilayer 2D Semiconductor Channels Using Thin Graphite Contact
论文作者
论文摘要
通常通过光探测（例如光致发光（PL））测量单层（2D）半导体的单层和几层层。但是，如果它们的去角质厚度高达几个nm（超过5L），则PL测量的效率降低和不准确，因为2D半导体的光学转变从直接变为间接模式。在这里，我们介绍了另一种估计多层范德华半导体的带隙的方法；这是利用现场效应晶体管（FET）作为平台。我们在FET中使用石墨烯（薄石墨或多层石墨烯）接触用于多层范德华通道，因为石墨烯的接触将在顶部钝化的帮助下确保schottky接触屏障FET的schottky接触屏障调谐。结果，通过测量与石墨烯接触的2D 2D FET的温度依赖性传递曲线特性，成功估计了多层过渡金属二北元化和黑色磷的带镜。
Band gap of monolayer and few layers in two dimensional (2D) semiconductors has usually been measured by optical probing such as photoluminescence (PL). However, if their exfoliated thickness is as large as a few nm (multilayer over ~5L), PL measurements become less effective and inaccurate because the optical transition of 2D semiconductor is changed from direct to indirect mode. Here, we introduce another way to estimate the bandgap of multilayer 2D van der Waals semiconductors; that is utilizing field effect transistor (FET) as a platform. We used graphene (thin graphite or multilayer graphene) contact for multilayer van der Waals channels in FET, because graphene contact would secure ambipolar behavior and enable Schottky contact barrier tuning of FETs with the assistance of top passivation. As a result, the bandgaps of multilayer transition metal dichalcogenides and black phosphorus in unknown thickness were successfully estimated through measuring the temperature-dependent transfer curve characteristics of prepared 2D FETs with graphene contact.
