论文标题
半助母子FEVSB外延膜的半吸附控制增长窗口
Semi-adsorption-controlled growth window for half Heusler FeVSb epitaxial films
论文作者
论文摘要
Heusler化合物的电子，磁性，热电和拓扑特性（成分$ xyz $或$ x_2 yz $）对化学计量和缺陷高度敏感。在这里，我们建立了存在的存在，并在实验上绘制了\ textit {semi}的吸附控制生长窗口，用于半导体半导体，半导体heusler fevsb膜，该薄膜是由分子束外观（MBE）生长的。我们表明，由于SB的高挥发性，SB化学计量学对于有限的生长温度和SB通量是自限制的，类似于III-V半导体（例如GAS和GAAS）的生长。在此窗口内生长的膜在结构上几乎无法通过X射线衍射（XRD）和反射高能电子衍射（Rheed）区分。最高的电子迁移率和最低的背景载体密度是在窗口富含SB的界限上获得的，这表明SB胶合可能是常见的缺陷。对于包含挥发性物种的其他三元间的金属质量，预期相似的\ textit {semi}预计会吸附控制边界，例如$ z = $ \ {sb，as，bi \}，例如cotisb，cotisb，luptsb，luptsb，gdptbi，gdptbi和nimnsb。但是，在控制剩余的Fe/V（$ x/y $）过渡金属化学计量计方面仍然存在出色的挑战。
The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a \textit{semi} adsorption-controlled growth window for semiconducting half Heusler FeVSb films, grown by molecular beam epitaxy (MBE). We show that due to the high volatility of Sb, the Sb stoichiometry is self-limiting for a finite range of growth temperatures and Sb fluxes, similar to the growth of III-V semiconductors such as GaSb and GaAs. Films grown within this window are nearly structurally indistinguishable by X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). The highest electron mobility and lowest background carrier density are obtained towards the Sb-rich bound of the window, suggesting that Sb-vacancies may be a common defect. Similar \textit{semi} adsorption-controlled bounds are expected for other ternary intermetallics that contain a volatile species $Z=$\{Sb, As, Bi\}, e.g., CoTiSb, LuPtSb, GdPtBi, and NiMnSb. However, outstanding challenges remain in controlling the remaining Fe/V ($X/Y$) transition metal stoichiometry.
