论文标题
由于抗铁磁磁性带中的自旋切割带的抗骨架，异常大厅的效应异常大，抗磁磁性带子抗抗铁磁带。
Exceptionally large anomalous Hall effect due to anticrossing of spin-split bands in the antiferromagnetic half-Heusler compound TbPtBi
论文作者
论文摘要
我们已经研究了磁转运特性和半赫斯勒化合物TBPTBI的拓扑电子结构。我们的实验表明，在tbptbi的倾斜抗铁磁状态下，异常大厅的效应异常，其异常霍尔角（AHA）达到〜0.68-0.76，这是GDPTBI中先前报道的记录的几倍。计算第一原理电子结构和相关的异常霍尔电导率，以解释实验结果。我们的分析表明，tbptbi中的AHE并非源自Weyl点，而是由TBPTBI Fermi水平附近的自旋切割带的抗旋转带产生的大型净浆果曲率驱动。
We have investigated magnetotransport properties and the topological electronic structure of the half-Heusler compound TbPtBi. Our experiments reveal an exceptionally large anomalous Hall effect (AHE) in the canted antiferromagnetic state of TbPtBi with the anomalous Hall angle (AHA) reaching ~0.68-0.76, which is a few times larger than the previously reported record in GdPtBi. First-principles electronic structure and the associated anomalous Hall conductivity were computed in order to interpret the experimental results. Our analysis shows that the AHE in TbPtBi does not originate from the Weyl points but that it is driven by the large net Berry curvature produced by the anticrossing of spin-split bands near the Fermi level in TbPtBi.
