论文标题
拓扑量子控制：$ν= 0 $ graphene Quantum Hall antiferRomagnet中的Skyrmions的边缘电流
Topological quantum control: Edge currents via Floquet depinning of skyrmions in the $ν= 0$ graphene quantum Hall antiferromagnet
论文作者
论文摘要
我们提出了一个缺陷到边缘拓扑量子淬灭协议，该方案可以有效地从缺陷核状态注入电荷到诱导的Chern绝缘子的手性边缘电流中。该系统的初始状态被认为是莫特绝缘子，电子与被无序固定的拓扑缺陷绑定在一起。我们表明，对Chern绝缘子质量的“关键淬火”从缺陷到边缘的莫特间隙分流器充电，而第二个更强的淬火可以将其捕获到那里并提高边缘速度，从而产生可控制的电流。我们将这个想法应用于石墨烯中$ν= 0 $ Quantum Hall Anterromagnet的Skyrmion电荷，在那里可以通过循环驱动循环驱动来完成Chern绝缘子的淬火。
We propose a defect-to-edge topological quantum quench protocol that can efficiently inject electric charge from defect-core states into a chiral edge current of an induced Chern insulator. The initial state of the system is assumed to be a Mott insulator, with electrons bound to topological defects that are pinned by disorder. We show that a "critical quench" to a Chern insulator mass of order the Mott gap shunts charge from defects to the edge, while a second stronger quench can trap it there and boost the edge velocity, creating a controllable current. We apply this idea to a skyrmion charge in the $ν= 0$ quantum Hall antiferromagnet in graphene, where the quench into the Chern insulator could be accomplished via Floquet driving with circularly polarized light.
