论文标题
HFTE5的量子极限中的非常规霍尔响应
Unconventional Hall response in the quantum limit of HfTe5
论文作者
论文摘要
相互作用的电子局限于高磁场中的最低兰道水平可以形成各种相关状态,其中一些状态表现在大厅效应中。尽管已经预测这种状态会在三维半学中发生,但尚未在实验中观察到相应的霍尔响应。在这里,我们报告了在散装半含量HFTE5的量子极限中观察到非常规HALL响应,该量子与低磁场在单个电子条带的三维量子厅效应相邻。最低Landau水平的大厅电导率中的额外高原样特征伴随着纵向电阻率的最低shubnikov-de haas,其幅度与三维量子厅效应的最后一个高原的高度相关。我们的发现与强烈的电子电子相互作用一致,在量子极限中以三维材料稳定了霍尔效应的非常规变体。
Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe5, adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.