论文标题
从绝缘体到GA2O3中的电灯驱动的永久性过渡
Light-driven permanent transition from insulator to conductor in Ga2O3
论文作者
论文摘要
可以在某些材料中实现从绝缘体到导体的过渡，但需要修改原子的排列及其电子构型。这通常是通过掺杂来实现的。在这里，我们揭示了晶格可以诱导这种过渡的机制。我们表明，对亚带gap光的暴露有限导致从绝缘体状态到绝缘氧化物GA2O3中的导体状态的永久过渡，电子传导增加了9个数量级。光激发修改了o视口的电荷状态和局部电子的重新分布，从而导致晶格中的大规模结构变形，这被证明是基本机制。它修改了状态的密度，并引入了具有较浅能量水平的新稳定状态，从而导致这种有趣的行为。我们建议这种机制可能发生在其他宽带的金属氧化物中，从而导致其电子特性的剧烈修饰。
The transition from insulator to conductor can be achieved in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by doping. Here we reveal a mechanism the lattice may adopt to induce such a transition. We show that limited exposure to sub-bandgap light caused a permanent transition from an insulator state to a conductor state in the insulating oxide Ga2O3 with 9-orders of magnitude increase in electronic conduction. Photoexcitation modifies the charge state of an O-vacancy and the redistribution of the localized electrons, leading to a massive structural distortion in the lattice that is shown to be the underlying mechanism. It modifies density of states and introduces new stable states with shallower energy levels, leading to this intriguing behavior. We suggest that this mechanism may occur in other wide bandgap metal oxides leading to drastic modification in their electronic properties.
