论文标题
记忆窗口表达式以预测FEFET的缩放趋势和耐力
A Memory Window Expression to Predict the Scaling Trends and Endurance of FeFETs
论文作者
论文摘要
由于缩放，保留和耐力问题，基于铁电晶体管（FEFET）的非易失性记忆的商业化仍然难以捉摸。因此，开发准确的表征工具以量化FEFET的缩放和可靠性极限很重要。在这项工作中，我们建议利用内存窗口的分析表达式（MW，即，由于极化切换而引起的阈值电压之间的差异）作为：i）确定MW的通用缩放行为，无论铁电材料与铁电材料无关； ii）预测耐力并解释其对写作条件的微弱依赖； iii）给出了MW低于理论限制的另一种解释；并且，基于此，iv）制定了为给定的铁电厚度最大化MW的策略。根据这些发现，MW的表征和分析将使基于新兴的铁电材料的下一代FEFET进行系统比较。
The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is important to develop accurate characterization tools to quantify the scaling and reliability limits of FeFETs. In this work, we propose to exploit an analytical expression for the Memory Window (MW, i.e., the difference between the threshold voltages due to polarization switching) as a tool to: i) identify a universal scaling behavior of MW regardless of the ferroelectric material; ii) predict endurance and explain its weak dependence on writing conditions; iii) give an alternative explanation for MW being lower than theoretical limits; and, based on this, iv) devise strategies to maximize MW for a given ferroelectric thickness. According to these findings, the characterization and analysis of MW would enable the systematic comparison of next-generation FeFET based on emerging ferroelectric materials.
