论文标题
2D铁磁双层中的Valley Polarized结构域壁坚
Valley-polarized domain wall magnons in 2D ferromagnetic bilayers
论文作者
论文摘要
Valleytronics是一个开创性的技术领域，依靠山谷的自由度来实现新型电子功能。鉴于其在谷化曲中的电势，对局限于双层石墨烯中域壁的拓扑谷极化电子进行了广泛的研究。在这里，我们研究了2D蜂窝铁磁双层（FBL）的宏伟版本壁式兴奋，并使用共线顺序。特别是，我们探讨了Dzyaloshinskii-Moriya相互作用（DMI）和静电掺杂（ED）对FBL中堆叠域壁的一维木胶的存在和特性的影响。发现DMI和ED的共存可以丰富FBL中的拓扑结构，但是相应的域墙磁子并未带有明确定义的山谷指数。另一方面，我们表明，无DMI FBL中的层堆叠域壁构成了拓扑谷极化木片的弹道传输的1D通道。我们的理论结果基于原子较薄的拓扑磁性材料，对镁谷晶型纤维设备产生了希望。
Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively studied in view of their potentials in valleytronics. Here, we study the magnonic version of domain wall excitations in 2D honeycomb ferromagnetic bilayers (FBL) with collinear order. In particular, we explore the implications of Dzyaloshinskii-Moriya interaction (DMI) and electrostatic doping (ED) on the existence and characteristics of 1D magnons confined to layer stacking domain walls in FBL. The coexistence of DMI and ED is found to enrich the topology in FBL, yet the corresponding domain wall magnons do not carry a well-defined valley index. On the other hand, we show that layer stacking domain walls in DMI-free FBL constitute 1D channels for ballistic transport of topological valley-polarized magnons. Our theoretical results raise hope towards magnon valleytronic devices based on atomically thin topological magnetic materials.
