论文标题
高速FEMTO-JOULE每位硅传导性氧化物纳米腔调节剂
High-Speed Femto-Joule per Bit Silicon-Conductive Oxide Nanocavity Modulator
论文作者
论文摘要
通过结合光子晶体纳米腔的巨大purcell效应和透明导电氧化物的强等血浆分散效应，具有与异质整合的依赖二氧化物氧化物（ITO）的超紧凑型硅调节剂可以潜在地实现无预见的能源效率，从而每位atto-joule aTto-joule abto-joule。在本文中，我们报告了由ITO门驱动的第一个高速硅纳米腔调节器，达到了2.2 GHz带宽。仅使用2 V电压摇摆和18.3 FJ/BIT能效率，可测量高达5 GB/s的开关调制。此外，我们对纳米腔调节器的能源效率和高频模拟进行了深入分析，揭示了半导体传导路径和累积的自由载体和腔谐振模式之间的重叠因子所起的关键作用。基于我们的分析，我们提出了一种策略，通过节点匹配的掺杂将调制带宽进一步提高到23.5 GHz，并将能源消耗降低到每位数百个atto-joule的范围。
By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can potentially achieve unprecedented energy efficiency to atto-joule per bit. In this article, we report the first high-speed silicon nanocavity modulator driven by an ITO gate, achieving 2.2 GHz bandwidth. On-off-key modulation is measured up to 5 Gb/s with only 2 V voltage swing and 18.3 fJ/bit energy efficiency. In addition, we perform in-depth analysis of the energy efficiency and high frequency simulation of the nanocavity modulator, revealing the critical role played by the semiconductor conduction path and the overlapping factor between the accumulated free carriers and the cavity resonant mode. Based on our analysis, we propose a strategy to further improve the modulation bandwidth to 23.5 GHz by node-matched doping and reduce the energy consumption to the range of hundreds of atto-joule per bit.
