论文标题
绝缘体到金属过渡的临界行为
Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si
论文作者
论文摘要
由于所得材料表现出强大的亚带吸收，因此可以利用墨西哥蛋白果仁的高量Si，这是一个引起人们兴趣的话题，可以利用使用完全兼容的技术来开发宽带室温红外光电探测器。在这里，我们报告了通过离子植入制造的Te Hyperdop的Si层中杂质驱动的绝缘体到金属过渡的临界行为，然后是纳米脉冲激光熔点。电运输测量结果揭示了绝缘体到金属的跃迁，这也可以通过密度功能理论计算来确认和理解。我们证明，金属阶段受到低于25 K的电导率的功率定律依赖性的控制，而绝缘阶段的电导率通过可变范围跳跃机制很好地描述，在2-50 K范围内，在温度下具有库仑间隙的可变范围差距。这些结果表明，该相互作用的电子波函数在不正确的范围内与不当行为相关。
Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.
