论文标题
超薄拓扑狄拉克半学和二维材料之间的电气接触
Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material
论文作者
论文摘要
拓扑狄拉克半学的超薄膜Na $ _3 $ bi最近被揭示为具有现场可调拓扑阶段的不寻常的电子材料。在这里,我们调查了Ultrathin Na $ _3 $ bi的电子和传输特性,作为与二维(2D)金属的电气接触,即石墨烯和2D半导体,即MOS $ _2 $和WS $ _2 $单层。使用组合的第一原则密度功能理论和非平衡绿色的功能模拟,我们表明Na $ _3 $ _3 $ bi Bi-Bileayer薄膜和石墨烯之间的电耦合会导致显着的层间电荷转移,从而诱导了Na $ _3 $ _3 $ _3 $ _3 $ BIBI/CHIBLENE/CHIPLENE CHEAMENE OSTRUCERITRES中的$ n $ type掺杂。对于MOS $ _2 $和WS $ _2 $单层,侧索特基运输屏障明显低于许多经常研究的散装金属,从而将Na $ _3 $ bi Biyer作为2D半导体的高效电气接触材料。这些发现开辟了利用拓扑半学薄膜作为与2D材料的电气接触的途径,并进一步将2D异质结构设备的家族扩展到了拓扑材料领域。
Ultrathin films of topological Dirac semimetal, Na$_3$Bi, has recently been revealed as an unusual electronic materials with field-tunable topological phases. Here we investigate the electronic and transport properties of ultrathin Na$_3$Bi as an electrical contact to two-dimensional (2D) metal, i.e. graphene, and 2D semiconductor, i.e. MoS$_2$ and WS$_2$ monolayers. Using combined first-principle density functional theory and nonequilibrium Green's function simulation, we show that the electrical coupling between Na$_3$Bi bilayer thin film and graphene results in a notable interlayer charge transfer, thus inducing sizable $n$-type doping in the Na$_3$Bi/graphene heterostructures. In the case of MoS$_2$ and WS$_2$ monolayers, the lateral Schottky transport barrier is significantly lower than many commonly studied bulk metals, thus unraveling Na$_3$Bi bilayer as a high-efficiency electrical contact material for 2D semiconductors. These findings opens up an avenue of utilizing topological semimetal thin film as electrical contact to 2D materials, and further expands the family of 2D heterostructure devices into the realm of topological materials.