论文标题
关于化学去角质MOS $ _2 $中亚稳态阶段金属性和稳定性的起源
On the Origin of Metallicity and Stability of the Metastable Phase in Chemically Exfoliated MoS$_2$
论文作者
论文摘要
MOS $ _2 $通过Li间隙途径的化学去角质导致了许多理想的特性和壮观的应用，因为除了稳定的H相外，还存在亚稳态。但是，形成的特定亚稳态及其基本电荷传导性能的性质仍然存在争议。使用空间分辨的拉曼光谱法（〜1微米分辨率）和光电子光谱（〜120 nm的分辨率），我们探测了与机械剥落的H相样样本相比，这种化学去除的MOS $ _2 $样品与这种方法形成的巨大的固定状态与Smill Smill smill smill cap g g g相比，我们探测了这种化学去除的MOS $ _2 $样品。 Investigating two such samples with different extents of Li residues present, we establish that Li+ ions, not only help to exfoliate MoS$_2$ into few layer samples, but also contribute to enhancing the relative stability of the metastable state as well as dope the system with electrons, giving rise to a lightly doped small bandgap system with the T' structure, responsible for its spectacular properties.
Chemical exfoliation of MoS$_2$ via Li-intercalation route has led to many desirable properties and spectacular applications due to the presence of a metastable state in addition to the stable H phase. However, the nature of the specific metastable phase formed, and its basic charge conduction properties have remained controversial. Using spatially resolved Raman spectroscopy (~1 micrometer resolution) and photoelectron spectroscopy (~120 nm resolution), we probe such chemically exfoliated MoS$_2$ samples in comparison to a mechanically exfoliated H phase sample and confirm that the dominant metastable state formed by this approach is a distorted T' state with a small semiconducting gap. Investigating two such samples with different extents of Li residues present, we establish that Li+ ions, not only help to exfoliate MoS$_2$ into few layer samples, but also contribute to enhancing the relative stability of the metastable state as well as dope the system with electrons, giving rise to a lightly doped small bandgap system with the T' structure, responsible for its spectacular properties.
