论文标题

具有高斯变形的石墨烯纳米管的电子传输特性

Electron transport properties of graphene nanoribbons with Gaussian deformation

论文作者

Tran, Van-Truong, Saint-Martin, Jérôme, Dollfus, Philippe

论文摘要

石墨烯结构中的高斯变形表现出一种有趣的作用,其中在变形区域中观察到花形束缚状态[Carrillo-Bastos等人,Phys。 Rev. B 90 041411(2014)]。为了利用这种变形为各种应用,可以预期可调电子功能,包括用于半金属结构的带隙开口。此外,还需要考虑疾病和外部激发的影响。在这项工作中,我们提出了一项有关高斯变形石墨烯丝带量子运输的系统研究。探索了不同水平的变形以找到电子传输的普遍行为。使用紧密结合模型与非平衡绿色功能形式主义结合使用,我们表明高斯变形强烈影响丝带的电子性质,即即使考虑了小变形,电子传输在高能量区域也会显着降低。有趣的是,它揭示了半金属扶手椅丝带传播的第一个高原在小变形的情况下受到微弱影响。然而,大量的大高斯凸起会引起该平稳的强烈下降,并形成一个运输差距。发现零能量的传输随着高斯凸起的大小增加而呈指数下降。此外,半导体丝带的差距被大变形增大。大型扶手椅结构中的开口或扩大的运输距离通过沿跳跃轮廓的传输方向形成了三区行为来解释。另一方面,无论高斯凸起的大小如何,在锯齿形丝带中都不会观察到传输缝隙。这种行为是由于边缘状态在能量点E = 0 ...的强烈定位所致

Gaussian deformation in graphene structures exhibits an interesting effect in which flower-shaped confinement states are observed in the deformed region [Carrillo-Bastos et al., Phys. Rev. B 90 041411 (2014)]. To exploit such a deformation for various applications, tunable electronic features including a bandgap opening for semi-metallic structures are expected. Besides, the effects of disorders and external excitations also need to be considered. In this work, we present a systematic study on quantum transport of graphene ribbons with Gaussian deformation. Different levels of deformation are explored to find a universal behavior of the electron transmission. Using a tight-binding model in combination with Non-Equilibrium Green Functions formalism, we show that Gaussian deformation influences strongly the electronic properties of ribbons in which the electron transmission decreases remarkably in high energy regions even if small deformations are considered. Interestingly, it unveils that the first plateau of the transmission of semi-metallic armchair ribbons is just weakly affected in the case of small deformations. However, significant large Gaussian bumps can induce a strong drop of this plateau and a transport gap is formed. The transmission at the zero energy is found to decrease exponentially with increasing the size of the Gaussian bump. Moreover, the gap of semi-conducting ribbons is enlarged with large deformations. The opening or the widening of the transport gap in large deformed armchair structures is interpreted by a formation of a three-zone behavior along the transport direction of the hopping profile. On the other hand, a transport gap is not observed in zigzag ribbons regardless of the size of Gaussian bumps. This behavior is due to the strong localization of edge states at the energy point E = 0...

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