论文标题
带门定义的量子点的高阻抗谐振器的片上微波炉过滤器
On-chip microwave filters for high-impedance resonators with gate-defined quantum dots
论文作者
论文摘要
电路量子电动力学(QED)用量子总线采用超导微波谐振器。在带有半导体量子点的QUD的电路中,需要增加谐振器的阻抗,因为它可以增强这些量子器的偶联偶联偶极矩的耦合。但是,在谐振器附近形成量子点所需的栅极电极无意间导致寄生端口通过,微波光子可以通过该端口泄漏,从而降低了谐振器的质量因子。高阻抗谐振器尤其如此,因为它们的总电容与寄生端口电容的比率更小,导致微波泄漏比50- $ω$谐振器更大。在这里,我们介绍了片上过滤器的实现,以抑制微波泄漏。过滤器包含高动感纳米电感器和薄膜电容器。该过滤器的占地面积很小,可以放置在谐振器附近,将微波炉限制在芯片的一小部分。滤波器元件的电感和电容可以在更大的值范围内变化,而其典型的螺旋电感器和互插的电容器对应物。我们证明,使用这些过滤器,可以将6.4 GHz和大约3 k $ω$谐振的总线宽提高到540 kHz。
Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertently lead to a parasitic port through which microwave photons can leak, thereby reducing the quality factor of the resonator. This is particularly the case for high-impedance resonators, as the ratio of their total capacitance over the parasitic port capacitance is smaller, leading to larger microwave leakage than for 50-$Ω$ resonators. Here, we introduce an implementation of on-chip filters to suppress the microwave leakage. The filters comprise a high-kinetic-inductance nanowire inductor and a thin-film capacitor. The filter has a small footprint and can be placed close to the resonator, confining microwaves to a small area of the chip. The inductance and capacitance of the filter elements can be varied over a wider range of values than their typical spiral inductor and interdigitated capacitor counterparts. We demonstrate that the total linewidth of a 6.4 GHz and approximately 3-k$Ω$ resonator can be improved down to 540 kHz using these filters.