论文标题
半导体中负-U缺陷的表征
Characterisation of negative-U defects in semiconductors
论文作者
论文摘要
这篇综述旨在提供回顾性，并描述有关半导体中负-U缺陷的理论和实验表征的最新和未来前景。这是通过对帐户进行补充的描述来完成的，该描述导致了半导体中一些最详细，最复杂的缺陷模型。提出了负-U行为为基础的基本物理，包括电子相关，电子 - 音波耦合，违约，缺陷过渡水平和速率。还引入了用于分析实验数据和建模的技术，即缺陷统计，载体捕获和发射动力学，缺陷转换，配置坐标图和其他工具。我们最终包括了几项作品的展示，这些作品导致了组合IV和复合半导体中一些影响最大的负-U缺陷。
This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of negative-U defects in semiconductors. This is done by complementing the account with a description of the work that resulted in some of the most detailed, and yet more complex defect models in semiconductors. The essential physics underlying the negative-U behaviour is presented, including electronic correlation, electron-phonon coupling, disproportionation, defect transition levels and rates. Techniques for the analysis of the experimental data and modelling are also introduced, namely defect statistics, kinetics of carrier capture and emission, defect transformation, configuration coordinate diagrams and other tools. We finally include a showcase of several works that led to the identification of some of the most impacting negative-U defects in group-IV and compound semiconductors.
