论文标题
狭窄的电线的蚀刻过程和对可调式屏障电子泵的应用
Etching process of narrow wire and application to tunable-barrier electron pump
论文作者
论文摘要
已经研究了单个电子源作为建立电流标准30年的设备，最近作为Fermion量子光学元件的按需相干来源。为了在GAAS/ALGAAS二维电子气体（2DEG）上构造单电子源，通常有必要通过蚀刻来制造亚微米线。我们已经建立了通过将光刻和电子束光刻与一步光线剂涂层相结合的脆弱2DEG制成的电线，这使我们能够同时蚀刻细和粗糙的结构。已经证明，在狭窄的电线泵上制造的单个电子源以射频固定的电子数量固定数量。制造技术改善了光刻过程，损坏2DEG的风险较低，并且适用于其他材料和干燥蚀刻的蚀刻。
Single electron sources have been studied as a device to establish an electric current standard for 30 years and recently as an on-demand coherent source for Fermion quantum optics. In order to construct the single electron source on a GaAs/AlGaAs two-dimensional electron gas (2DEG), it is often necessary to fabricate a sub-micron wire by etching. We have established techniques to make the wire made of the fragile 2DEG by combining photolithography and electron beam lithography with one-step photoresist coating, which enables us to etch fine and coarse structures simultaneously. It has been demonstrated that a single electron source fabricated on the narrow wire pumps fixed number of electrons per one cycle with radio frequency. The fabrication technique improves the lithography process with lower risk to damage the 2DEG and is applicable to etching of other materials and dry etching.
