论文标题
ti合金$α$ -GA $ _2 $ o $ _3 $：通往宽带间隙工程的路线
Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering
论文作者
论文摘要
研究了Ti作为$α$ -GA $ _2 $ o $ $ _3 $的乐队间隙修饰符的适用性，利用了ISOSSTRUCTURALIALIA-lapees和Ti $ _2 $ _2 $ o $ _3 $和GA $ $ _2 $ o $ o $ _3 $之间的高频段间隙差。 Ti：ga $ _2 $ o $ _3 $的胶片，具有一系列Ti浓度，由原子层沉积在蓝宝石底物上合成，以确定结晶度和乐队间隙如何随着这种合金的成分而变化。结晶的沉积$α$ - （ti $ _x $ ga $ _ {1-x} $）$ _ 2 $ o $ $ $ _3 $ thims，最多x〜5.3％，已证明。在更高的TI浓度下，膜变得无定形。 Modification of the band gap over a range of ~ 270 meV was achieved across the crystalline films and a maximum change in band gap from pure $α$-Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Ti fraction (61% Ti relative to Ga).在Ti的低部分保持结晶相的能力，伴随着带隙的重大修改，显示了带隙工程的希望，以及$α$ -GA $ -GA $ -GA $ _2 $ _2 $ _3 $ _3 $ opoElectRonic设备的多功能性的增强。
The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composition for this alloy. The deposition of crystalline $α$-(Ti$_x$Ga$_{1-x}$)$_2$O$_3$ films with up to x~5.3%, was demonstrated. At greater Ti concentration, the films became amorphous. Modification of the band gap over a range of ~ 270 meV was achieved across the crystalline films and a maximum change in band gap from pure $α$-Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Ti fraction (61% Ti relative to Ga). The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a significant modification in band gap shows promise for band gap engineering and the enhancement in versatility of application of $α$-Ga$_2$O$_3$ in optoelectronic devices.
