论文标题
GAAS上的密度与温度的重新进入行为（111）A
Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
论文作者
论文摘要
我们表明，GAAS上的依赖岛的密度（111）底物具有非单调的，重入的行为，这是鉴定沉积温度的函数。实际上，随着温度的降低，预期的密度增加仅至160°C，在该温度下，依赖群岛进行了预期的液体到固体相变。进一步降低温度会导致岛屿密度的大量降低。在80°C以下观察到了另外的，再入侵的行为。我们将上述复杂行为归因于液固相变的液体和晶体岛的相互作用，该岛屿的相互作用在菌株存在下发生在晶体岛之间。在160°C以下的温度下生长的依赖固体岛具有面部为中心的立方晶体结构。
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeable reduction of the island density. An additional, reentrant increasing behavior is observed below 80 °C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 °C have a face-centered cubic crystal structure.
