论文标题
微观浴对半导体量子点量子的噪声光谱的影响
Microscopic bath effects on noise spectra in semiconductor quantum dot qubits
论文作者
论文摘要
当系统仅热耦合到较大浴缸的一小部分时，该系统的统计波动（更准确地说，是内部能量）在较大浴缸定义的平均温度周围的“子浴”的统计波动可能会变得显着。我们表明，这些温度波动通常从单个两级系统中产生1/f样噪声功率频谱密度。我们将这些结果扩展到波动器的分布，发现对Dutta-Horn关系的相应修改。然后，我们考虑硅量子点量子位中电荷噪声的特定情况，并表明最近的实验数据[E. E. J. Connors等人，物理学。 Rev. b 100，165305（2019）]可以建模为少于两个两级波动器，并且对子量的大小进行核算可提高拟合度的质量。
When a system is thermally coupled to only a small part of a larger bath, statistical fluctuations of the temperature (more precisely, the internal energy) of this "sub-bath" around the mean temperature defined by the larger bath can become significant. We show that these temperature fluctuations generally give rise to 1/f-like noise power spectral density from even a single two-level system. We extend these results to a distribution of fluctuators, finding the corresponding modification to the Dutta-Horn relation. Then we consider the specific situation of charge noise in silicon quantum dot qubits and show that recent experimental data [E. J. Connors, et al., Phys. Rev. B 100, 165305 (2019)] can be modeled as arising from as few as two two-level fluctuators, and accounting for sub-bath size improves the quality of the fit.
