论文标题
石墨烯Moire系统中的脆弱绝缘体和电子词
Fragile Insulator and Electronic Nematicity in a Graphene Moire System
论文作者
论文摘要
密切相关的量子物质表现出各种各样的出色特性,但行为依据的组织原则仍有待确定。石墨烯异质结构可以容纳扩大相关效果的狭窄摩尔电子频段,它代表了在这个总体问题上取得进展的新设置。在这种相关的Moire系统中,绝缘状态是相图的突出特征,并且可能是理解基本物理学的关键。在这里,我们推进了脆弱的绝缘子的概念,即相关驱动的绝缘状态,即在离域化过渡到不良金属的边缘。我们使用现实的多梁哈伯德模型作为狭窄带Moire系统的原型,我们意识到了如此脆弱的绝缘体,并在该状态以及附近的不良金属状态下展示了nematic秩序。我们的结果与石墨烯Moire系统中观察到的电子各向异性相一致,并自然了解绝缘体调谐到不良金属中时会发生什么。我们提出脆弱的绝缘子和随附的坏金属作为竞争状态在整数填充物上,类似地固定了相关的摩尔系统及以后的整体相图。
Strongly correlated quantum matter exhibits a rich variety of remarkable properties, but the organizing principles that underlie the behavior remain to be established. Graphene heterostructures, which can host narrow moire electron bands that amplify the correlation effect, represent a new setting to make progress on this overarching issue. In such correlated moire systems, an insulating state is a prominent feature of the phase diagram and may hold the key to understanding the basic physics. Here we advance the notion of a fragile insulator, a correlation-driven insulating state that is on the verge of a delocalization transition into a bad metal. Using a realistic multiorbital Hubbard model as a prototype for narrow band moire systems, we realize such a fragile insulator and demonstrate a nematic order in this state as well as in the nearby bad metal regime. Our results are consistent with the observed electronic anisotropy in the graphene moire systems and provide a natural understanding of what happens when the insulator is tuned into a bad metal. We propose the fragile insulator and the accompanying bad metal as competing states at integer fillings that analogously anchor the overall phase diagram of the correlated moire systems and beyond.