论文标题
通过RMS噪声分析观察单声子介导的量子量子传输
Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis
论文作者
论文摘要
我们通过商用CMOS晶体管的电子噪声表征探索了声子介导的量子传输。由于通道中的单个杂质原子，该设备的表现是单个电子晶体管。低噪声低温CMOS透射放大器被利用，以同时对单个电子，单个供体和单个声子进行低频噪声表征，而不是通过标准稳定性图可见。单电子隧道以及声子介导的特征在RMS噪声测量中出现。通过杂质原子，通过产生重组现象以高频发射声子。语音衰减与低频时的洛伦兹$ 1/f^2 $噪声相关。
We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian $1/f^2$ noise at low frequency.
