论文标题
分层膜系统GE-BI中的融化和结晶
Melting and crystallization in layered film system Ge-Bi
论文作者
论文摘要
提出了BI-GE分层膜系统中熔化和结晶过程的研究结果。这些系统是通过真空中分量的随后凝结来制备的。已经表明，研究系统中的熔化温度随着BI膜厚度的降低而降低。用于熔化温度注册的差分技术使我们能够测量系统中共晶温度的值$t_ε$ = 542 K。结晶时过冷的值（$ΔT$ = 93 K）和润湿角（$θ= 68^\ circ $）已确定针对无定形GE基板上的BI岛。
The results of studies of melting and crystallization processes in Bi-Ge layered film system are presented. These systems were prepared by subsequent condensation of components in vacuum. It has been shown that the melting temperature in system under study decreases with the decrease of Bi film thickness. The differential technique used for melting temperature registration enables us to measure the value of eutectic temperature $T_ε$ = 542 K in the system. The values of supercooling upon crystallization ($ΔT$ = 93 K) and wetting angle ($θ= 68^\circ$) have been determined for Bi islands on amorphous Ge substrate.
