论文标题
在垂直外延界面的局部化学计量修饰驱动的异常电导率
Unusual Electrical Conductivity Driven by Localized Stoichiometry Modification at Vertical Epitaxial Interfaces
论文作者
论文摘要
跨界面的晶格不匹配适应和阳离子交叉的精确控制对于调节外延异质结构中的相关功能至关重要,尤其是当界面组成位于组成相过渡边界附近时。在这里,我们选择LA1-XSRXMNO3(LSMO)作为一种典型的相过渡材料,并与NIO建立垂直的外延接口,以探索应变适应性,化学测定法修饰和跨界面的局部电子传输之间的强相互作用。发现局部化学计量法修饰克服了LSMO中的残留死亡层问题,并导致了强烈的定向电导率,这表现为平面外到平面电导率之间的三个以上的数量级差异。全面的结构表征和运输测量表明,这种新兴行为与定向阳离子扩散产生的组成变化有关,该变化将LSMO相转变从超薄界面区域内的金属中的金属推动。这项研究探讨了在垂直外延界面上异常电导率的性质,并为氧化物电子的工程纳米级电子传输建立了有效的途径。
Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La1-xSrxMnO3 (LSMO) as a prototypical phase transition material and establish vertical epitaxial interfaces with NiO to explore the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiometry modification overcomes the plaguing dead layer problem in LSMO and leads to strongly directional conductivity, as manifested by more than three orders of magnitude difference between out-of-plane to in-plane conductivity. Comprehensive structural characterization and transport measurements reveal that this emerging behavior is related to a compositional change produced by directional cation diffusion that pushes the LSMO phase transition from insulating into metallic within an ultrathin interface region. This study explores the nature of unusual electric conductivity at vertical epitaxial interfaces and establishes an effective route for engineering nanoscale electron transport for oxide electronics.