论文标题
拓扑kagome磁铁FE3SN2的外延膜中的异常大厅和nernst效果
Anomalous Hall and Nernst effects in epitaxial films of topological kagome magnet Fe3Sn2
论文作者
论文摘要
拓扑Kagome磁铁（TKM）FE3SN2具有异常的拓扑特性，平坦的电子带和手性自旋纹理，使其成为探索拓扑带结构，强电子相关性和磁性之间的相互作用的精致材料平台。在这里，我们报告了高质量外延（0001）FE3SN2膜的第一个合成，其内在的异常效应较大，接近在散装单晶中测得的效果。此外，我们测量了一个大型各向异性异常的Nernst系数SYX1.26μV/K，大约比普通铁磁体大约2-5倍，这表明该系统中Fermi水平附近存在浆果曲率来源。至关重要的是，高质量的FE3SN2膜的实现为探索新兴的界面物理学打开了大门，并通过将FE3SN2与其他量子材料和纳米结构模式插入了基于TKM的新型Spintronic设备。
The topological kagome magnet (TKM) Fe3Sn2 exhibits unusual topological properties, flat electronic bands, and chiral spin textures, making it an exquisite materials platform to explore the interplay between topological band structure, strong electron correlations, and magnetism. Here we report the first synthesis of high-quality epitaxial (0001) Fe3Sn2 films with large intrinsic anomalous Hall effect close to that measured in bulk single crystals. In addition, we measured a large, anisotropic anomalous Nernst coefficient Syx of 1.26 μV/K, roughly 2-5x greater than that of common ferromagnets, suggesting the presence of Berry curvature sources near the Fermi level in this system. Crucially, the realization of high-quality Fe3Sn2 films opens the door to explore emergent interfacial physics and create novel spintronic devices based on TKMs by interfacing Fe3Sn2 with other quantum materials and by nanostructure patterning.
