论文标题
独立于极化的可重新配置频率选择性rasorber/吸收器，插入损失低
Polarization-independent reconfigurable frequency selective rasorber/absorber with low insertion loss
论文作者
论文摘要
本文提出了基于二极管的低插入损失的独立于极化的可重构频率选择性rasorber（FSR）/吸收器。呈现的结构由基于方形环和带通频率选择表面的有损层组成。这两个层被空气层隔开。每一层都有一个嵌入式偏置网络，该网络通过金属通过金属为二极管提供偏置电压。这种配置可以避免与其他偏置线相关的不良效果。当二极管处于外国家状态时，结构处于FSR模式，并在4.28GHz的传输窗口中，在吸收带中只有0.69dB插入损失（IL）。虽然二极管处于州立状态，并且结构切换到吸收模式，但它可实现完美的吸收，吸收性超过90％，范围为2.8至5.2 GHz。开发了等效电路模型（ECM）来分析结构的物理机制。在观察模拟和测量之间合理的协议，验证该设计的有效性的情况下，制造和测量了所提出的体系结构的原型。
A polarization-independent reconfigurable frequency selective rasorber (FSR)/absorber with low insertion loss based on diodes is proposed in this paper. The presented structure consists of a lossy layer based on square loops and a bandpass frequency-selective surface. These two layers are separated by an air layer. Each layer has an embedded bias network that provides the bias voltage to the diodes through metallic via. This configuration can avoid undesirable effects associated with the additional biasing wire. When the diodes are in off-state, the structure is in FSR mode and exhibits a transmission window at 4.28GHz with only 0.69dB insertion loss (IL) within the absorption bands. While diodes are in on-state and the structure switches to absorber mode, it achieves perfect absorption with absorptivity of over 90% ranging from 2.8 to 5.2 GHz. An equivalent circuit model (ECM) is developed to analyse the physical mechanism of the structure. A prototype of the proposed architecture is fabricated and measured, where reasonable agreements between simulations and measurements are observed, verifying the effectiveness of this design.
