论文标题
在扭曲的Fe3gete2/fe3gete2结中观察到高原状的磁场
Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction
论文作者
论文摘要
发现控制范德华（VDW）材料的堆叠可以产生令人兴奋的新发现，因为异质结构或同型结构增加了组装和操纵功能的不同可能性。但是，到目前为止，基于磁VDW材料具有扭曲角的同位结构仍未探索。在这里，我们实现了扭曲的磁VDW FE3Gete2/fe3gete2连接，具有断裂的晶体对称性。与温度依赖性电阻和线性I-V曲线一起证明了干净的金属VDW连接。与原始的FGT不同，由于两个FGT层的反平行磁性构型，在我们同型的磁极转移中观察到了高原样的磁路（PMR）。发现PMR比率约为0.05％，并且随着温度的降低而单调增强，就像金属巨型磁场（GMR）一样。这种微小的PMR比至少比隧道磁力（TMR）的比率至少三个数量级，从而证明我们没有垫片的清洁金属连接处是合理的。我们的发现证明了使用磁VDW材料对未来的Spintronics的可控同位结构的可行性。
Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo- structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the homostructure with a twisted angle based on the magnetic vdW materials remains unexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junction with broken crystalline symmetry. A clean and metallic vdW junction is evidenced by the temperature-dependent resistance and the linear I-V curve. Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed in the magnetotransport of our homojunction due to the antiparallel magnetic configurations of the two FGT layers. The PMR ratio is found to be ~0.05% and gets monotonically enhanced as temperature decreases like a metallic giant magnetoresistance (GMR). Such a tiny PMR ratio is at least three orders of magnitude smaller than the tunneling magnetoresistance (TMR) ratio, justifying our clean metallic junction without a spacer. Our findings demonstrate the feasibility of the controllable homostructure and shed light on future spintronics using magnetic vdW materials.
