论文标题
快速计算Laplace方程的3D和2D数值解的硅传感器中的电容，并与实验数据和TCAD模拟进行比较
Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations
论文作者
论文摘要
我们已经开发了一个软件，用于基于拉普拉斯方程的3D和2D数值解的平面硅像素和带状传感器的电容。对2D计算的有效性进行了对多几何硅条探测器（MSSD）的电容测量的检查。通过与文献中的像素传感器电容测量进行比较，测试了3D计算。在这两种情况下，将拉普拉斯方程的结果与从TCAD Sentaurus Suite获得的模拟进行了比较。开发的软件是一种有用的工具，用于快速估算互规，插入式和背板电容，节省计算时间，作为第一个近似值，然后在使用更复杂的平台（如果需要）以确保更准确的结果。
We have developed a software for fast calculation of capacitances in planar silicon pixel and strip sensors, based on 3D and 2D numerical solutions of the Laplace's equation. The validity of the 2D calculations was checked with capacitances measurements on Multi-Geometry Silicon Strip Detectors (MSSD). The 3D calculations were tested by comparison with pixel sensors capacitance measurements from literature. In both cases the Laplace equation results were compared with simulations obtained from the TCAD Sentaurus suite. The developed software is a useful tool for fast estimation of interstrip, interpixel and backplane capacitances, saving computation time, as a first approximation before using a more sophisticated platform for more accurate results if needed.
