论文标题
对神经形态计算的相互shno同步的熟悉控制
Memristive control of mutual SHNO synchronization for neuromorphic computing
论文作者
论文摘要
大型自旋霍尔纳米振荡器（SHNO）阵列的同步是一种基于纳米级耦合振荡器网络的超快速非惯性计算的吸引力方法。但是，对于大型阵列，与网络接口，调整其单个振荡器，耦合并为训练目的提供内置的内存单元，这仍然是重大挑战。在这里，我们使用基于COFEB/MGO/ALOX的SHNOS的回忆登陆来应对所有这些挑战。在其高电阻态（HRS）中，备忘录可调节纯电场的coFEB/MGO界面处的垂直磁各向异性（PMA）。在其低电阻状态（LRS）中，根据电压极性，备忘录会增加/减去shno驱动器的电流/减去电流。 HRS和LRS中的操作都会影响SHNO自动振荡模式和频率，可以调整高达28 MHz/v。这种调整使我们可以在四个SHNOS的链中可逆地开/关闭相互同步。我们还展示了两个单独控制的备忘录，以量身定制耦合强度和同步状态的频率。因此，Memristor Gating是一种有效的方法，用于用于任何非规定计算范式的SHNO阵列的输入，调整和存储状态，均以一个平台为单位。
Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network, tuning its individual oscillators, their coupling, and providing built-in memory units for training purposes, remain substantial challenges. Here, we address all these challenges using memristive gating of W/CoFeB/MgO/AlOx based SHNOs. In its high resistance state (HRS), the memristor modulates the perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface purely by the applied electric field. In its low resistance state (LRS), and depending on the voltage polarity, the memristor adds/subtracts current to/from the SHNO drive. The operation in both the HRS and LRS affects the SHNO auto-oscillation mode and frequency, which can be tuned up to 28 MHz/V. This tuning allows us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate two individually controlled memristors to tailor both the coupling strength and the frequency of the synchronized state. Memristor gating is therefore an efficient approach to input, tune, and store the state of the SHNO array for any non-conventional computing paradigm, all in one platform.
