论文标题
固定在六角硼硼中的石墨烯纳米纤维的手性控制
Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride
论文作者
论文摘要
具有相似晶格但独特的电性能的二维材料的平面内生长可以提供有希望的途径，以实现原子厚度的集成电路。但是，在HBN晶格中的边缘特异性GNR的制造仍然是当前方法的巨大挑战。在这里，我们开发了两步生长方法，并分别成功地实现了嵌入HBN中的5 nm宽的曲折和扶手椅GNR。 Further transport measurements reveal that the sub 7 nm wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap width relationship.This integrated lateral growth of edge specific GNRs in hBN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical高质量绝缘HBN底物的电路。
The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub 5 nm wide zigzag and armchair GNRs embedded in hBN, respectively. Further transport measurements reveal that the sub 7 nm wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap width relationship.This integrated lateral growth of edge specific GNRs in hBN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical circuits on high quality insulating hBN substrates.
