论文标题
用光电倍增管和MPPC对CSI(TL)的脉冲形状区分
Pulse Shape Discrimination of CsI(Tl) with a Photomultiplier Tube and MPPCs
论文作者
论文摘要
在这项研究中,我们评估和比较了使用CSI(TL)闪光灯测试时,多偶偶发光子计数器(MPPC,也称为Silicon Photomultiphers -SIPMS)的脉冲形状分化(PSD)性能与典型的光电层管(PMT)的性能与典型的光电层管(PMT)的性能。我们使用电荷比较方法,从而通过在两个时间门内(延迟部分和整个数字化波形)中积分的电荷比例来区分不同类型的粒子。对于令人满意的PSD性能,设置应生成许多光电子(P.E.)并有效地收取费用。 PMT设置生成更多P.E.比MPPC设置所做的。使用相同的数字化器和相同的长时间门(整个数字化波形),PMT设置也更好。因此,PMT设置显示出更好的PSD性能。随后,我们使用新的数据采集(DAQ)系统测试MPPC设置。使用此新的DAQ,使用上一个数字化器时,长时间栅极的长度却是长度的近四倍。有了这个较长的时间门,我们收集了更多的P.E.在脉冲的尾部以及几乎所有收集的P.E的电荷的电荷。因此,MPPC设置的PSD性能得到显着提高。这项研究还提供了估计短的时间门(数字化波形的延迟部分)的估计,该时间对psd的性能可以使PSD性能令人满意,而无需进行广泛的分析以优化此门。
In this study, we evaluate and compare the pulse shape discrimination (PSD) performance of multipixel photon counters (MPPCs, also known as silicon photomultiphers - SiPMs) with that of a typical photomultiplier tube (PMT) when testing using CsI(Tl) scintillators. We use the charge comparison method, whereby we discriminate different types of particles by the ratio of charges integrated within two time-gates (the delayed part and the entire digitized waveform). For a satisfactory PSD performance, a setup should generate many photoelectrons (p.e.) and collect their charges efficiently. The PMT setup generates more p.e. than the MPPC setup does. With the same digitizer and the same long time-gate (the entire digitized waveform), the PMT setup is also better in charge collection. Therefore, the PMT setup demonstrates better PSD performance. We subsequently test the MPPC setup using a new data acquisition (DAQ) system. Using this new DAQ, the long time-gate is extended by nearly four times the length when using the previous digitizer. With this longer time-gate, we collect more p.e. at the tail part of the pulse and almost all the charges of the total collected p.e. Thus, the PSD performance of the MPPC setup is improved significantly. This study also provides an estimation of the short time-gate (the delayed part of the digitized waveform) that can give a satisfactory PSD performance without an extensive analysis to optimize this gate.