论文标题
平面多层2D Geas Schottky光电二极管高性能相关光电检测
Planar Multilayered 2D GeAs Schottky Photodiode for High Performance VIS-NIR Photodetection
论文作者
论文摘要
新型组IVV 2D半导体（例如，GEAS和SIAS）已成为广泛波段光电检测和光电应用的有吸引力的候选者。这个2D家族具有宽的可调带隙，出色的热力学稳定性和强大的面内各向异性。但是，到目前为止，尚未对其光子和光电特性进行广泛的探索。在这项工作中，我们证明了基于多层2D GEA的不对称接触几何形状的背对背金属 - 苏型 - 基准 - 金属（MSM）Schottky光电二极管。光电探测器显示出0.40至0.49 eV范围内的Schottky屏障高度（SBH）。此外，它显示出从紫外线到光学通信波长的稳定，可再现和出色的宽带光谱响应的低黑电流。可见的最高测量响应性为905 A/W，在660 nm波长下，在红外线附近1064 nm的98 a/w。最值得注意的是，该GEAS光电探测器的计划构型显示出低于1.2 pf，低压操作（<1V）和可能超过40 GHz的大带宽的低检测器电容。该设备的稳定性和宽带响应有望在高速光电设备中使用该2D材料。
Novel group IVV 2D semiconductors (e.g., GeAs and SiAs) has arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has wide tunable bandgap, excellent thermodynamic stability, and strong in-plane anisotropy. However, their photonic and optoelectronic properties have not been extensively explored so far. In this work we demonstrate a broadband back-to-back metal-semiconductor-metal (MSM) Schottky photodiode with asymmetric contact geometries based on multilayered 2D GeAs. The photodetector exhibited a Schottky barrier height (SBH) in the range of 0.40 to 0.49 eV. Additionally, it showed low dark current of 1.8 nA with stable, reproducible, and excellent broadband spectral response from UV to optical communication wavelengths. The highest measured responsivity in the visible is 905 A/W at 660 nm wavelength and 98 A/W for 1064 nm near infrared. Most notably, the planner configuration of this GeAs photodetector showed low detector capacitance below 1.2 pf, low voltage operation (<1V), and a large bandwidth which may exceed 40 GHz. The stability and broadband response of the device are promising for this 2D materials application in high-speed optoelectronic devices.
