论文标题
石墨烯中的Moiré图案 - 二硫化物垂直异质结构
Moiré patterns in graphene -- rhenium disulfide vertical heterostructures
论文作者
论文摘要
原子薄材料的垂直堆叠为实现通过接近效应和莫伊尔图案实现的新型特性提供了一个大型平台。在这里，我们专注于石墨烯和res $ _2 $的机械组装异质结构，一个范德华分层的半导体。使用扫描隧道显微镜和光谱学（STM/STS），我们会在两种材料以及重叠区域之间的锐角图像。局部分辨的地形图像揭示了存在于石墨烯的六边形结构与三斜胶的六角形，低平面对称性$ _2 $之间的层间相互作用的存在。我们将结果与理论模型进行了比较，该模型估算了石墨烯和Res $ _2 $之间Moiré模式的形状和角度依赖性。这些结果揭示了具有不同晶格对称性的范德华材料之间的复杂界面现象。
Vertical stacking of atomically thin materials offers a large platform for realizing novel properties enabled by proximity effects and moiré patterns. Here we focus on mechanically assembled heterostructures of graphene and ReS$_2$, a van der Waals layered semiconductor. Using scanning tunneling microscopy and spectroscopy (STM/STS) we image the sharp edge between the two materials as well as areas of overlap. Locally resolved topographic images revealed the presence of a striped superpattern originating in the interlayer interactions between graphene's hexagonal structure and the triclinic, low in-plane symmetry of ReS$_2$. We compare the results with a theoretical model that estimates the shape and angle dependence of the moiré pattern between graphene and ReS$_2$. These results shed light on the complex interface phenomena between van der Waals materials with different lattice symmetries.
