论文标题
氮化壳非线性光子学
Integrated Gallium Nitride Nonlinear Photonics
论文作者
论文摘要
氮化炮（GAN）作为宽带间隙材料已广泛用于固态照明中。由于其高非线性和高折射率对比度，Gan-On-on-on-on-Insulator（Ganoi）也是非线性光学应用的有前途的平台。尽管具有引人入胜的光学所有权，但由于GAN波导的光学损失相对较高（2 dB/cm），因此很少研究GAN的非线性应用。在这封信中，我们报告了固有质量因子超过200万的Ganoi微孔子，相当于光损失为0.26 dB/cm。证明了低至8.8 mW的参数振荡阈值功率，并且估计在电信波长处实验提取的GAN的非线性指数为N2 = 1.2*10 -18 m2W -1，与硅相当。 GAN中的单孤子产生是通过辅助激光泵送方案实施的，以减轻GAN中的高热效应效应。大型的内在非线性折射率以及其宽带透明度窗口和高折射率对比度，使Ganoi成为芯片规模非线性应用的最平衡平台。
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite its intriguing optical proprieties, nonlinear applications of GaN have rarely been studied due to the relatively high optical loss of GaN waveguides (2 dB/cm). In this letter, we report GaNOI microresonator with intrinsic quality factor over 2 million, corresponding to an optical loss of 0.26 dB/cm. Parametric oscillation threshold power as low as 8.8 mW is demonstrated, and the experimentally extracted nonlinear index of GaN at telecom wavelengths is estimated to be n2 = 1.2*10 -18 m2W-1, which is comparable with silicon. Single soliton generation in GaN is implemented by an auxiliary laser pumping scheme, so as to mitigate the high thermorefractive effect in GaN. The large intrinsic nonlinear refractive index, together with its broadband transparency window and high refractive index contrast, make GaNOI a most balanced platform for chip-scale nonlinear applications.
