论文标题
学习使用NB掺杂的SRTIO $ _3 $ MEMRISTORS近似功能
Learning to Approximate Functions Using Nb-doped SrTiO$_3$ Memristors
论文作者
论文摘要
回忆录引起了神经形态计算元素的兴趣,因为它们在实现人工神经元和突触的有效硬件实现方面表现出了希望。我们对接口类型的回忆录进行了测量,以验证其在神经形态硬件中的使用。具体而言,我们通过将它们安排成差分突触对,利用了NB掺杂的Srtio $ _3 $ emristors作为模拟神经网络中的突触,并通过两个配对的回忆器之间的归一化电导值差给定的连接重量。该网络学会了通过基于新型监督学习算法的训练过程来表示功能,在此期间,将离散的电压脉冲应用于每对的两个回忆录之一。为了模拟一个事实,即物理回忆设备的初始状态和每个电压脉冲的影响都是未知的,我们在每个时间步中注入噪声。然而,证明基于本地知识的离散更新可导致鲁棒的学习表现。据我们所知,使用此类的回忆设备作为峰值神经网络中的突触重量元素,这是这种模型的第一个模型之一,能够学习成为通用函数近似器,并强烈建议这些新闻人对未来计算平台中使用的适用性。
Memristors have attracted interest as neuromorphic computation elements because they show promise in enabling efficient hardware implementations of artificial neurons and synapses. We performed measurements on interface-type memristors to validate their use in neuromorphic hardware. Specifically, we utilised Nb-doped SrTiO$_3$ memristors as synapses in a simulated neural network by arranging them into differential synaptic pairs, with the weight of the connection given by the difference in normalised conductance values between the two paired memristors. This network learned to represent functions through a training process based on a novel supervised learning algorithm, during which discrete voltage pulses were applied to one of the two memristors in each pair. To simulate the fact that both the initial state of the physical memristive devices and the impact of each voltage pulse are unknown we injected noise at each timestep. Nevertheless, discrete updates based on local knowledge were shown to result in robust learning performance. Using this class of memristive devices as the synaptic weight element in a spiking neural network yields, to our knowledge, one of the first models of this kind, capable of learning to be a universal function approximator, and strongly suggests the suitability of these memristors for usage in future computing platforms.