论文标题
量子井中电子结构调制下的电压控制的磁各向异性
Voltage-controlled magnetic anisotropy under the electronic structure modulation in quantum wells
论文作者
论文摘要
电压控制的磁各向异性（VCMA）提供了一种新的方法，可以实现诸如磁随机访问记忆（MRAMS）之类的Spintronic设备中的节能磁化切换。在这里，我们表明操纵凝结状态，即引入量子井（QW）可以显着影响CR/FE-QW/MGAL2O4基于CR/FE-QW/MGAL2O4的磁性隧道连接（MTJ）。仅对于具有均匀数量原子层的MTJ，我们在特定的QW状态下观察到了一种新型的A形VCMA曲线，其中磁各向异性能量（MAE）在零偏置处达到局部最大值，并在应用正偏置和负偏置时降低，即一种新型的Bi-Polar VCMA效应。我们的从头算计算表明，QW状态对垂直磁各向异性（PMA）做出了额外的贡献，这不仅可以解释A形的VCMA，还可以解释VCMA的Fe-Layer-number-number平价依赖性。本研究表明，QW修饰的VCMA应为设计VCMA辅助MRAM的新途径打开新途径。
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states, i.e., introducing quantum well (QW) can significantly influence the VCMA in a Cr/Fe-QW/MgAl2O4 based magnetic tunnel junction (MTJ). Only for the MTJ with an even number of Fe atomic layers, we observed a novel A-shaped VCMA curve for a particular QW state, where magnetic anisotropy energy (MAE) reaches a local maximum at zero bias and reduces when applying both positive and negative bias, i.e., a novel bi-polar VCMA effect. Our ab initio calculations demonstrate that the QW states give an additional contribution to perpendicular magnetic anisotropy (PMA), which can explain not only the A-shaped VCMA but also the Fe-layer-number parity dependence of VCMA. The present study suggests that the QW-modulated VCMA should open a new pathway to design VCMA-assisted MRAM.
