论文标题

通过停留时间度量的缺陷定位

Localization of defects via residence time measures

论文作者

Cirillo, Emilio N. M., Ciallella, Alessandro, Vantaggi, Barbara

论文摘要

我们表明,停留时间度量可用于识别沿路径缺陷的几何和传输特性。我们研究的模型是基于一维简单的随机步行。晶格的站点是常规的,即跳跃概率在每个站点中是相同的,除了一个称为\ emph {缺陷}的站点,其中跳跃概率不同。在晶格的每一侧都存在吸收位点。我们表明,通过测量越过通道的颗粒的分数和/或它们需要越过的典型时间,可以识别晶格的主要特征和缺陷位点的主要特征,即定期,缺陷部位和缺陷位置的跳跃概率以及在晶格中的缺陷位置。

We show that residence time measure can be used to identify the geometrical and transmission properties of a defect along a path. The model we study is based on a one--dimensional simple random walk. The sites of the lattice are regular, i.e., the jumping probabilities are the same in each site, except for a site, called \emph{defect}, where the jumping probabilities are different. At each side of the lattice an absorbing site is present. We show that by measuring the fraction of particles crossing the channel and/or the typical time they need to cross it, it is possible to identify the main features of the lattice and of the defect site, namely, the jumping probabilities at regular and at the defect sites and the position of the defect in the lattice.

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